May 24, 2024  
Graduate Record 2007-2008 
Graduate Record 2007-2008 [ARCHIVED RECORD]

ECE 862 - High Speed Transistors

Includes the principles of operation, device physics, basic technology, and modeling of high speed transistors. A brief review of material properties of most important compound semiconductors and heterostructure systems, followed by the discussion of high speed Bipolar Junction Transistor technology, Heterojuction Bipolar Transistors, and Tunneling Emitter Bipolar Transistors and by the theory and a comparative study of MESFETs, HFETs, and Variable-Threshold and Split-gate Field Effect Transistors. Also includes advanced transistor concepts based on ballistic and hot electron transport in semiconductors such as Ballistic Injection Transistors and Real Space Transfer Transistors (RSTs) concepts. (SI)

Prerequisites & Notes
Prerequisite: ECE 663 or 768 or instructor permission.

Credits: 3